![Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy – arXiv Vanity Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy – arXiv Vanity](https://media.arxiv-vanity.com/render-output/7732181/inas100hse.png)
Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy – arXiv Vanity
Introduction to Condensed Matter Intrinsic Carrier Concentration (15 points) Shallow Donors in InSb (15 points)
![Figure 1 from Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors | Semantic Scholar Figure 1 from Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/53398c6fe1debdd248e5374615c4e3f77ccb94ef/7-Figure1-1.png)
Figure 1 from Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors | Semantic Scholar
Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence
Simulation of the band structure of InAs/GaSb type II superlattices utilizing multiple energy band theories
![Optimization of synthesis conditions of thin Te-doped InSb films and first principles studies of their physicochemical properties - ScienceDirect Optimization of synthesis conditions of thin Te-doped InSb films and first principles studies of their physicochemical properties - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0169433220324727-ga1.jpg)
Optimization of synthesis conditions of thin Te-doped InSb films and first principles studies of their physicochemical properties - ScienceDirect
![Revisiting the optical bandgap of semiconductors and the proposal of a unified methodology to its determination | Scientific Reports Revisiting the optical bandgap of semiconductors and the proposal of a unified methodology to its determination | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41598-019-47670-y/MediaObjects/41598_2019_47670_Fig1_HTML.png)
Revisiting the optical bandgap of semiconductors and the proposal of a unified methodology to its determination | Scientific Reports
![Color online) The calculated band structures of InAs, InSb, and InAs x... | Download Scientific Diagram Color online) The calculated band structures of InAs, InSb, and InAs x... | Download Scientific Diagram](https://www.researchgate.net/publication/277352564/figure/fig2/AS:294364929642497@1447193476269/Color-online-The-calculated-band-structures-of-InAs-InSb-and-InAs-x-Sb-1-x-x-0.png)
Color online) The calculated band structures of InAs, InSb, and InAs x... | Download Scientific Diagram
![The bulk InSb band structure near the Γ -point with (solid lines) and... | Download Scientific Diagram The bulk InSb band structure near the Γ -point with (solid lines) and... | Download Scientific Diagram](https://www.researchgate.net/publication/267396701/figure/fig1/AS:295754762604545@1447524838468/The-bulk-InSb-band-structure-near-the-G-point-with-solid-lines-and-without-dashed.png)
The bulk InSb band structure near the Γ -point with (solid lines) and... | Download Scientific Diagram
1 Band structure of InSb showing four Kane model bands near the direct... | Download Scientific Diagram
![One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range](https://cpb.iphy.ac.cn/article/2019/2015/cpb_28_12_124205/cpb_28_12_124205_f5.jpg)
One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range
![First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface | ACS Applied Materials & Interfaces First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface | ACS Applied Materials & Interfaces](https://pubs.acs.org/cms/10.1021/acsami.3c00323/asset/images/large/am3c00323_0008.jpeg)
First-Principles Assessment of CdTe as a Tunnel Barrier at the α-Sn/InSb Interface | ACS Applied Materials & Interfaces
![One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range](https://cpb.iphy.ac.cn/article/2019/2015/cpb_28_12_124205/cpb_28_12_124205_f7.jpg)
One-dimensional structure made of periodic slabs of SiO<sub>2</sub>/InSb offering tunable wide band gap at terahertz frequency range
![Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C](https://pubs.rsc.org/image/article/2016/NR/c6nr06841c/c6nr06841c-f5_hi-res.gif)